to ? 126 1. emitter 2. collector 3. base to-126 plastic-encapsulate transistors bd136/138/140 transistor (pnp) features z high current z complement to bd135, bd137 and bd139 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bd136 bd138 BD140 v (br)cbo i c = -0.1ma,i e =0 -45 -60 -80 v collector-emitter sustaining voltage bd136 bd138 BD140 v ceo(sus) * i c =-0.03a,i b =0 -45 -60 -80 v emitter-base breakdown voltage v (br)ebo i e =-0.1ma,i c =0 -5 v collector cut-off current i cbo v cb =-30v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -10 a h fe(1) * v ce =-2v, i c =-150ma 40 250 h fe(2) * v ce =-2v, i c =-5ma 25 dc current gain h fe(3) * v ce =-2v, i c =-500ma 25 collector-emitter saturation voltage v ce(sat) * i c =-500ma,i b =-50ma -0.5 v base-emitter voltage v be * v ce =-2v, i c =-500ma -1 v *pulse test: pulse width 350 s, duty cycle 2.0%. classification of h fe(1) rank 6 10 16 range 40-100 63-160 100-250 symbol parameter value unit v cbo collector-base voltage bd136 bd138 BD140 -45 -60 -80 v v ceo collector-emitter voltage bd136 bd138 BD140 -45 -60 -80 v v ebo emitter-base voltage -5 v i c collector current -1.5 a p c collector power dissipation 1.25 w r ja thermal resistance from junction to ambient 100 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,may,2012
-1 -10 -100 -1000 -0 -400 -800 -1200 -100 10 -200 -400 -600 -800 -1000 -1 -10 -100 -1000 -1 -10 -100 -1000 0 50 100 150 200 250 300 -1 -10 -100 -1000 -1 -10 -100 -1000 -0 -1 -2 -3 -4 -5 -0 -50 -100 -150 -200 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 -0.1 -1 -10 10 100 1000 v be h fe ?? -1500 =10 i c v besat ?? t a =100 t a =25 base-emitter saturation voltage v besat (mv) collector current i c (ma) i c f t ?? common emitter v ce = -2v t a =25 transition frequency f t (mhz) collector current i c (ma) i c ?? common emitter v ce =-2v t a =100 t a =25 -1500 collector current i c (ma) base-emmiter voltage v be (mv) common emitter v ce =-2v -1500 i c t a =25 t a =100 dc current gain h fe collector current i c (ma) 200 -1500 =10 t a =100 t a =25 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) bd138 -1ma -0.9ma -0.8ma -0.7ma -0.6ma -0.5ma -0.4ma -0.3ma static characteristic -0.2ma i b =-0.1ma common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) p c ?? t a collector power dissipation p c (w) ambient temperature t a ( ) 100 30 -30 -10 f=1mhz i e =0/i c =0 t a =25 -20 v cb / v eb c ob / c ib ?? c ob c ib capacitance c (pf) reverse voltage v (v) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,may,2012
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